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| Datasheet File OCR Text: |
| NTE16003 Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz Description: The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance, and low output capacitance. This device is intended for Class A, B, or C amplifier, oscillator, or frequency multiplier circuits and is specifically designed for operation in the VHF-UHF region. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC (max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.6W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66.4mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter-Base Breakdown Voltage Symbol ICEO Test Conditions VCE = 30V, IB = 0 Min - 65 4 40 65 - - 3 Typ - - - - - - 500 - Max 0.1 - - - - 10 - - Unit mA V V V V pF MHz W Collector-Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0 V(BR)EBO IE = 0.1mA, IC = 0 Collector-Emitter Breakdown Voltage V(BR)CEO IC = 0 to 200mA, IB = 0, Note 1 Collector-Emitter Breakdown Voltage V(BR)CEV IC = 0 to 200mA, VBE = -1.5V, Note 1 Output Capacitance Current Gain-Bandwidth Product RF Power Output, Class C, Unneutralized Cob fT Pout VCB = 30V, IC = 0, f = 1MHz VCE = 28V, IC = 150mA, f = 100MHz f = 175MHz, VCE = 28V, PIN = 1W Note 1. Pulsed through 25mH inductor, Duty Factor = 50% Collector .200 (5.08) Dia Emitter .430 (10.92) Base .340 (8.63) Dia .038 (0.98) Dia .480 (12.19) Max .320 (8.22) Max .113 (2.88) 10-32 NF-2A .078 (1.97) Max .455 (11.58) Max |
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